تستر قطعات الکترونیکی LCR-T4

This device provides NPN and PNP transistors automatical detection, n-channel and p-channel MOSFETs, diodes, thyristors, resistors, capacitors, and many other components. It is also possible to measure certain characteristics of these devices as, for example, the current amplification factor of BJT or the gate threshold voltage of a MOSFET and much more.

Specification:
1. Measuring bipolar transistor current amplification factor and base-emitter threshold voltage.
2. Automatic test the pin of a component, and display on the 128 * 64 LCD backlight.
3. Measure the gate and gate capacitance of the MOSFET threshold voltage.
4. One -button operation, automatic shutdown, Only 20nA shutdown current.
5. Reverse breakdown voltage is less than 4.5V, Zener diode can be identified.
6. 2uF more capacitors can simultaneously measure the equivalent series resistance ESR values.
7. Via the base-emitter threshold voltage and high current amplification factor to identify Darlington transistors.
8. Can simultaneously measure two resistors and resistor symbol is displayed.
9. Displayed on the right with a decimal value of 4.
10. Can detect the transistor, MOSFET protection diode amplification coefficient and the base to determine the emitter transistor forward biased voltage.
11. Automatic detection of NPN and PNP transistors, n-channel and p-channel MOSFET, the diode (including double diode), thyristor, transistor, resistor and capacitor, and other components.

Features:
Power Mode: 6F22
Display: 128 * 64 LCD Backlight
Testing Speed: 2 Seconds (1 minute is normal for large capacitor)
Shutdown Current: 20nA
Displayed Value: 25pf-100mF (resolution 1pF)
Inductance: 0.01mH-20H
Resistance: ≤2100Ω
Power Voltage: 9V Layer-built battery / 2 li-ion batteries to form a 8.4V battery pack
Resolution of Resistance Measurement: 0.1 Ohms
Provided Testing Current: Approx. 6mA
Product Size: 7.2 x 6.25cm (L * W)