ترانزیستور ماسفت IRF3205

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Inverters

motor speed control

DC/DC Converters

Switching circuits

MOSFET, N, 55V, 110A, TO-220

Transistor polarity: N channel

Uninterrupted drain current Id: 110A

Drain source voltage Vds: 55 V.

On resistance Rds (on): 8mohm

Rds (on) test voltage Vgs: 10 V.

Threshold voltage Vgs: 4V.

Power dissipation Pd: 150 W.

Transistor housing style: TO-220

Number of pins: 3.

Operating temperature range: -55 °C to + 175 °C.

Material: silicone wafer + copper + resin.

Color: black
package: TO-220